Interdisciplinary School of Green Energy, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology-UNIST, Ulsan 689-798, Republic of Korea.
Sci Rep. 2012;2:690. doi: 10.1038/srep00690. Epub 2012 Sep 25.
Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H₂ gas pressure up to 24 bar from 300 K to 345 K. Upon H₂ exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H₂ adsorption due to the existence of vacancy defects on graphene.
由于在器件应用中对石墨烯电子结构进行必不可少的调制以及将石墨烯用作储氢材料的可能性，因此对氢与石墨烯之间相互作用的研究需求日益增加。在这里，我们报告了使用单、双和多层石墨烯片的栅极电压依赖性电阻作为函数，在 300 K 至 345 K 温度范围内，在高达 24 巴的 H₂气体压力下，研究了分子氢在石墨烯上的行为。在 H₂暴露后，电荷中性点向负栅极电压区域移动，表明发生 n 型掺杂，并且通过 TEM 确定，明显的拉曼特征变化、多层石墨烯层间距离增加以及 d 间距减小。这些结果表明由于石墨烯上存在空位缺陷，发生了 H₂的离解吸附。
