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一个逃避失活的基因定位于X染色体近端短臂:对X染色体失活的影响。

Localization of a gene that escapes inactivation to the X chromosome proximal short arm: implications for X inactivation.

作者信息

Brown C J, Willard H F

机构信息

Department of Medical Genetics, University of Toronto.

出版信息

Am J Hum Genet. 1990 Feb;46(2):273-9.

Abstract

The process of mammalian X chromosome inactivation results in the inactivation of most, but not all, genes along one or the other of the two X chromosomes in females. On the human X chromosome, several genes have been described that "escape" inactivation and continue to be expressed from both homologues. All such previously mapped genes are located in the distal third of the short arm of the X chromosome, giving rise to the hypothesis of a region of the chromosome that remains noninactivated during development. The A1S9T gene, an X-linked locus that complements a mouse temperature-sensitive defect in DNA synthesis, escapes inactivation and has now been localized, in human-mouse somatic cell hybrids, to the proximal short arm, in Xp11.1 to Xp11.3. Thus, A1S9T lies in a region of the chromosome that is separate from the other genes known to escape inactivation and is located between other genes known to be subject to X inactivation. This finding both rules out models based on a single chromosomal region that escapes inactivation and suggests that X inactivation proceeds by a mechanism that allows considerable autonomy between different genes or regions on the chromosome.

摘要

哺乳动物X染色体失活过程导致雌性两条X染色体中的一条上的大多数(而非全部)基因失活。在人类X染色体上,已发现多个基因“逃脱”失活并在两条同源染色体上持续表达。所有先前定位的此类基因都位于X染色体短臂的远侧三分之一处,由此产生了一种假说,即染色体上存在一个在发育过程中保持未失活的区域。A1S9T基因是一个X连锁基因座,可弥补小鼠DNA合成中的温度敏感缺陷,它逃脱失活,现已在人-鼠体细胞杂种中定位到近端短臂,位于Xp11.1至Xp11.3区域。因此,A1S9T基因位于染色体的一个区域,该区域与已知逃脱失活的其他基因分开,且位于已知会发生X染色体失活的其他基因之间。这一发现既排除了基于单个逃脱失活的染色体区域的模型,也表明X染色体失活是通过一种机制进行的,该机制允许染色体上不同基因或区域之间具有相当大的自主性。

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