Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931-6054, USA.
Opt Lett. 2012 Oct 1;37(19):3966-8. doi: 10.1364/OL.37.003966.
In this Letter, we describe the fabrication of an array of bimaterial detectors for infrared (IR) imaging that utilize SiO(2) as a structural material. All the substrate material underneath the active area of each detector element was removed. Each detector element incorporates an optical resonant cavity layer in the IR-absorbing region of the sensing element. The simplified microfabrication process requires only four photolithographic steps with no wet etching or sacrificial layers. The thermomechanical deflection sensitivity was 7.9×10(-3) rad/K, which corresponds to a noise equivalent temperature difference (NETD) of 2.9 mK. In the present work, the array was used to capture IR images while operating at room temperature and atmospheric pressure without the need for vacuum packaging. The average measured NETD of our IR detector system was approximately 200 mK, but some sensing elements exhibited an NETD of 50 mK.
在这封信中，我们描述了一种利用二氧化硅（SiO2）作为结构材料的用于红外（IR）成像的双材料探测器阵列的制造方法。每个探测器元件的有源区下方的所有衬底材料都被去除。每个探测器元件在感应元件的 IR 吸收区域都包含一个光学共振腔层。简化的微制造工艺仅需要四个光刻步骤，无需湿法刻蚀或牺牲层。热机械挠度灵敏度为 7.9×10(-3) rad/K，对应于噪声等效温差（NETD）为 2.9 mK。在目前的工作中，该阵列在无需真空封装的情况下，在室温及大气压下运行时，用于捕获 IR 图像。我们的 IR 探测器系统的平均测量 NETD 约为 200 mK，但一些感应元件的 NETD 为 50 mK。
