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结合III-V族和硅材料的多结太阳能电池的理论性能。

Theoretical performance of multi-junction solar cells combining III-V and Si materials.

作者信息

Mathews Ian, O'Mahony Donagh, Corbett Brian, Morrison Alan P

机构信息

Tyndall National Institute, UCC, Lee Maltings, Prospect Row, Cork, Ireland.

出版信息

Opt Express. 2012 Sep 10;20 Suppl 5:A754-64. doi: 10.1364/OE.20.00A754.

DOI:10.1364/OE.20.00A754
PMID:23037542
Abstract

A route to improving the overall efficiency of multi-junction solar cells employing conventional III-V and Si photovoltaic junctions is presented here. A simulation model was developed to consider the performance of several multi-junction solar cell structures in various multi-terminal configurations. For series connected, 2-terminal triple-junction solar cells, incorporating an AlGaAs top junction, a GaAs middle junction and either a Si or InGaAs bottom junction, it was found that the configuration with a Si bottom junction yielded a marginally higher one sun efficiency of 41.5% versus 41.3% for an InGaAs bottom junction. A significant efficiency gain of 1.8% over the two-terminal device can be achieved by providing an additional terminal to the Si bottom junction in a 3-junction mechanically stacked configuration. It is shown that the optimum performance can be achieved by employing a four-junction series-connected mechanically stacked device incorporating a Si subcell between top AlGaAs/GaAs and bottom InGaAs cells.

摘要

本文提出了一种提高采用传统III-V族和硅光伏结的多结太阳能电池整体效率的方法。开发了一个模拟模型,以考虑几种多结太阳能电池结构在各种多端配置下的性能。对于串联连接的2端三结太阳能电池,其包含一个AlGaAs顶部结、一个GaAs中间结以及一个硅或InGaAs底部结,结果发现,底部结为硅的配置在标准测试条件下的效率略高,为41.5%,而底部结为InGaAs的配置效率为41.3%。通过在三结机械堆叠配置中为硅底部结提供一个额外的端,可以比两端器件实现1.8%的显著效率提升。结果表明,通过采用一种四结串联连接的机械堆叠器件,在顶部AlGaAs/GaAs和底部InGaAs电池之间包含一个硅子电池,可以实现最佳性能。

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