Imec vzw, Kapeldreef 75, Leuven, Belgium.
Nanoscale. 2012 Nov 21;4(22):7205-11. doi: 10.1039/c2nr32353b.
Modulation of resonance modes of plasmonic nanostructures at a single nanostructure level is of great importance for the development of integrated photonic chips. Recent progress of the fabrication techniques including double electron beam lithography, direct laser printing, and electron beam induced deposition has allowed the local fabrication of sub-50 nm size nanoparticles (NPs) of various materials, which provides a potential experimental realization of local impact on plasmonic behaviors of single nanostructures. In this article, we theoretically investigate that the presence of a single NP in the midgap may give rise to the excitation of new resonance modes and/or large spectral shifts of resonance modes for different plasmonic dimers (gold bowtie, nanodisk and nanorod dimers), therefore resulting in the modification of the far-field and near-field optical properties. The modification can be controlled by changing the deposition position, particle size, and material composition of the single NP. Moreover, our calculations imply that the plasmonic dimers perturbed locally by a single NP of the metal-insulator phase transition material (vanadium dioxide) in the gap can potentially act as very effective optical switch components in future photonic chips.
在单个纳米结构水平上对等离子体纳米结构的共振模式进行调制对于集成光子芯片的发展非常重要。包括双电子束光刻、直接激光打印和电子束诱导沉积在内的最新制造技术的进展使得能够局部制造各种材料的亚 50nm 尺寸的纳米颗粒（NPs），这为局部影响单个纳米结构的等离子体行为提供了潜在的实验实现。在本文中，我们从理论上研究了在中场中存在单个 NP 可能会引起新的共振模式的激发和/或共振模式的大光谱位移，从而导致远场和近场光学性质的改变。通过改变单个 NP 的沉积位置、颗粒尺寸和材料组成，可以控制这种修饰。此外，我们的计算表明，通过在间隙中局部用金属-绝缘体相变材料（二氧化钒）的单个 NP 来扰动等离子体二聚体，可能在未来的光子芯片中充当非常有效的光学开关元件。
