Physik Department E20, Technische Universität München, James Franck Str. 1, D-85748 Garching, Germany.
Nano Lett. 2012 Nov 14;12(11):5821-8. doi: 10.1021/nl303170m. Epub 2012 Oct 19.
Ultrathin films of boron nitride (BN) have recently attracted considerable interest given their successful incorporation in graphene nanodevices and their use as spacer layers to electronically decouple and order functional adsorbates. Here, we introduce a BN monolayer grown by chemical vapor deposition of borazine on a single crystal Cu support, representing a model system for an electronically patterned but topographically smooth substrate. Scanning tunneling microscopy and spectroscopy experiments evidence a weak bonding of the single BN sheet to Cu, preserving the insulating character of bulk hexagonal boron nitride, combined with a periodic lateral variation of the local work function and the surface potential. Complementary density functional theory calculations reveal a varying registry of the BN relative to the Cu lattice as origin of this electronic Moiré-like superstructure.
氮化硼(BN)的超薄薄膜最近引起了相当大的兴趣,因为它们成功地被纳入了石墨烯纳米器件中,并且被用作间隔层,以电子方式隔离和有序排列功能吸附物。在这里,我们介绍了一种通过在单晶 Cu 衬底上热解六方氮化硼生长的 BN 单层,它代表了一种电子图案化但形貌光滑的衬底的模型体系。扫描隧道显微镜和光谱实验证明了单层 BN 片与 Cu 的弱键合,保持了块状六方氮化硼的绝缘性质,同时具有局部功函数和表面电势的周期性横向变化。互补的密度泛函理论计算揭示了 BN 相对于 Cu 晶格的变化注册是这种电子莫尔超结构的起源。