IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland.
Phys Rev Lett. 2012 Oct 5;109(14):146102. doi: 10.1103/PhysRevLett.109.146102. Epub 2012 Oct 3.
At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations as due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with the STM images simulated by density functional theory.
在亚单层覆盖的情况下,Mn 在垂直于底层 Si 二聚体行的 Si(001)表面上形成原子线。虽然许多其他元素在室温下形成对称的二聚体线,但我们发现 Mn 线具有不对称的外观,并固定了附近的 Si 二聚体。我们发现,具有 Mn 三聚体单元的原子构型可以解释这些观察结果,这是由于线附近的 Si 二聚体的翘曲相和 Mn 三聚体的取向之间的相互作用。我们使用高分辨率扫描隧道显微镜(STM)成像详细研究了由此产生的四种线构型,并将我们的发现与密度泛函理论模拟的 STM 图像进行了比较。