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无结构对称性时,InGaAs 量子点中亮激子能级简并的普遍恢复。

Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry.

机构信息

Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany.

出版信息

Phys Rev Lett. 2012 Oct 5;109(14):147401. doi: 10.1103/PhysRevLett.109.147401. Epub 2012 Oct 1.

Abstract

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high-fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric fields. This is achieved by using one external perturbation to align the polarization of the exciton emission along the axis of the second perturbation, which then erases completely the energy splitting of the states. This result, which holds for any quantum dot structure, highlights the potential of combining complementary external fields to create artificial atoms meeting the stringent requirements posed by scalable semiconductor-based quantum technology.

摘要

通常情况下,半导体量子点缺乏结构对称性,这消除了亮激子态的能量简并,并严重阻碍了它们作为高保真度纠缠光子源的应用。我们通过实验和理论证明,通过同时施加大应变和电场,总是可以恢复激子简并。这是通过使用外部扰动来使激子发射的偏振沿着第二个扰动的轴来实现的,这就完全消除了状态的能量分裂。这个结果适用于任何量子点结构,突出了结合互补外部场来创建满足基于半导体的可扩展量子技术严格要求的人造原子的潜力。

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