Department of Physics, McGill University, Montreal, QC, Canada H3A2T8.
Proc Natl Acad Sci U S A. 2012 Nov 20;109(47):19097-102. doi: 10.1073/pnas.1208699109. Epub 2012 Nov 5.
A mechanically formed electrical nanocontact between gold and tungsten is a prototypical junction between metals with dissimilar electronic structure. Through atomically characterized nanoindentation experiments and first-principles quantum transport calculations, we find that the ballistic conduction across this intermetallic interface is drastically reduced because of the fundamental mismatch between s wave-like modes of electron conduction in the gold and d wave-like modes in the tungsten. The mechanical formation of the junction introduces defects and disorder, which act as an additional source of conduction losses and increase junction resistance by up to an order of magnitude. These findings apply to nanoelectronics and semiconductor device design. The technique that we use is very broadly applicable to molecular electronics, nanoscale contact mechanics, and scanning tunneling microscopy.
金和钨之间机械形成的电纳米接触是具有不同电子结构的金属之间的典型连接。通过原子特征化的纳米压痕实验和第一性原理量子输运计算,我们发现由于金中的 s 波状电子输运模式和钨中的 d 波状模式之间的基本不匹配,穿过这个金属间界面的弹道传导大大降低。结的机械形成引入了缺陷和无序,这成为传导损耗的额外来源,并使结电阻增加了一个数量级。这些发现适用于纳米电子学和半导体器件设计。我们使用的技术非常广泛地适用于分子电子学、纳米级接触力学和扫描隧道显微镜。