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从第一性原理计算分子结中的定量电流-电压特性。

Quantitative current-voltage characteristics in molecular junctions from first principles.

机构信息

Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, United States.

出版信息

Nano Lett. 2012 Dec 12;12(12):6250-4. doi: 10.1021/nl3033137. Epub 2012 Nov 28.

Abstract

Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, improving upon order-of-magnitude errors in currents obtained with standard DFT approaches. We further propose an approximate route for prediction of quantitative IV characteristics for both symmetric and asymmetric molecular junctions based on linear response theory and knowledge of the Stark shifts of junction resonance energies. Our work demonstrates that a quantitative, computationally inexpensive description of coherent transport in molecular junctions is readily achievable, enabling new understanding and control of charge transport properties of molecular-scale interfaces at large bias voltages.

摘要

使用自能修正的密度泛函理论(DFT)和相干散射态方法,我们以定量精度解释了四种吡啶-Au 和胺-Au 连接的分子结的电流-电压(IV)测量结果。无参数的多电子自能修正DFT Kohn-Sham 本征值被证明可以在有限偏压下与实验结果非常吻合,改善了标准 DFT 方法得到的电流中的数量级误差。我们进一步提出了一种基于线性响应理论和结共振能量斯塔克位移知识的对称和非对称分子结定量 IV 特性预测的近似途径。我们的工作表明,在分子结中实现相干输运的定量、计算成本低的描述是容易实现的,从而能够在大偏压下对分子尺度界面的电荷输运性质进行新的理解和控制。

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