Center for Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
Molecules. 2012 Nov 23;17(12):13923-36. doi: 10.3390/molecules171213923.
Ultrafast near-infrared absorption spectroscopy was used to investigate the influence of film morphology and excitation photon energy on the charge recombination (CR) dynamics in the initial nanosecond timescale in the P3HT/PC(61)BM blend films. With reference to the CS(2)-cast films, the solvent vapor annealed (SVA) ones show 2–3-fold improvement in hole mobility and more than 5-fold reduction in the polymer-localized trap states of holes. At Dt = 70 ps, the hole mobility (m(h)) and the bimolecular CR rate (γ(bi)) of the SVA films are μ(h) = 8.7 × 10(−4) cm2 × s(−1) × V(−1) and γ(bi) = 4.5 × 10(−10) cm3 × s(−1), whereas at Δt = 1 ns they drop to 8.7 × 10(−5) cm2 × s(−1) × V(−1) and 4.6 × 10(−11) cm3 × s(−1), respectively. In addition, upon increasing the hole concentration, the hole mobility increases substantially faster under the above-gap photoexcitation than it does under the band-gap photoexcitation, irrespective of the film morphologies. The results point to the importance of utilizing the photogenerated free charges in the early timescales.
超快近红外吸收光谱被用来研究薄膜形态和激发光子能量对 P3HT/PC(61)BM 共混膜中初始纳秒时间尺度内电荷复合(CR)动力学的影响。与 CS(2)-浇铸膜相比,溶剂蒸气退火(SVA)膜的空穴迁移率提高了 2-3 倍,聚合物局域空穴陷阱态减少了 5 倍以上。在 Dt = 70 ps 时,SVA 膜的空穴迁移率(m(h))和双分子 CR 速率(γ(bi))分别为μ(h) = 8.7 × 10(−4) cm2 × s(−1) × V(−1)和γ(bi) = 4.5 × 10(−10) cm3 × s(−1),而在 Δt = 1 ns 时,它们分别降至 8.7 × 10(−5) cm2 × s(−1) × V(−1)和 4.6 × 10(−11) cm3 × s(−1)。此外,在增加空穴浓度的情况下,无论薄膜形态如何,在带隙以上的光激发下,空穴迁移率的增加速度明显快于在带隙光激发下的速度。这些结果表明了在早期时间尺度内利用光生自由电荷的重要性。