Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2012 Oct 26;109(17):176601. doi: 10.1103/PhysRevLett.109.176601.
Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C(60) by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C(60) by more than 3 orders of magnitude, to reach 0.21 cm(2)/(V s).
有机半导体中的尾部态通过在电荷输运中充当陷阱对器件性能有显著影响。我们研究了通过分子 n 掺杂引入的电子对富勒烯 C(60)中受主尾部态的受控钝化。通过超低掺杂，我们能够用电荷依次填充陷阱，并研究电导率、激活能、迁移率和费米能级位置的变化。陷阱的钝化导致 C(60)中的电子迁移率增加了 3 个数量级以上，达到 0.21 cm(2)/(V s)。
