Wang Xin-Yi, Ding Yi-Fan, Zhang Xiao-Yan, Zhou Yang-Yang, Pan Chen-Kai, Li Yuan-He, Liu Nai-Fu, Yao Ze-Fan, Chen Yong-Shi, Xie Zhi-Hao, Huang Yi-Fan, Xu Yu-Chun, Wu Hao-Tian, Huang Chun-Xi, Xiong Miao, Ding Li, Yu Zi-Di, Li Qi-Yi, Zheng Yu-Qing, Wang Jie-Yu, Pei Jian
Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, People's Republic of China.
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, People's Republic of China.
Nature. 2025 May 28. doi: 10.1038/s41586-025-09075-y.
Doping is a primary method to modulate the electrical properties of semiconductors, enabling the fabrication of various homojunctions/heterojunctions and complex devices. For organic semiconductors (OSCs), the electrical performance has been extensively improved by developing doping methods and dopants. However, compared with the state-of-the-art spatial resolution of inorganic semiconductor fabrication processes, OSCs lag far behind, limiting the construction of complex organic electronic devices. Here we present a facile light-triggered doping strategy and develop a series of inactive photoactivable dopants (iPADs) for regionally controlled n-doping of OSCs. By converting iPADs into active dopants through ultraviolet (UV) exposure, controllable doping of various n-type OSCs with high electrical conductivity greater than 30 S cm has been realized. Using iPADs can substantially improve the performances of OSCs in transistors, logic circuits and thermoelectrics. Also, regionally controlled doping is demonstrated in OSCs with a record resolution down to 1 μm. Overall, our strategy has achieved tunable doping levels in OSCs with high spatial resolution, which is expected to be highly suited for integrated circuits in both roll-to-roll and laboratory-scale environments.
掺杂是调节半导体电学性质的主要方法，可用于制造各种同质结/异质结以及复杂器件。对于有机半导体（OSC）而言，通过开发掺杂方法和掺杂剂，其电学性能已得到广泛改善。然而，与无机半导体制造工艺的当前空间分辨率相比，有机半导体远远落后，这限制了复杂有机电子器件的构建。在此，我们提出了一种简便的光触发掺杂策略，并开发了一系列用于有机半导体区域控制n型掺杂的非活性光可激活掺杂剂（iPAD）。通过紫外线（UV）照射将iPAD转化为活性掺杂剂，已实现了对各种电导率大于30 S cm 的n型有机半导体的可控掺杂。使用iPAD可以显著提高有机半导体在晶体管、逻辑电路和热电领域的性能。此外，在有机半导体中展示了区域控制掺杂，记录分辨率低至1 μm。总体而言，我们的策略在有机半导体中实现了具有高空间分辨率的可调掺杂水平，有望非常适合卷对卷和实验室规模环境中的集成电路。
