IBM Almaden Research Center, San Jose, California, USA.
Phys Rev Lett. 2012 Nov 9;109(19):196803. doi: 10.1103/PhysRevLett.109.196803.
We study the electrolyte-gate-induced conductance at the surface of SrTiO(3)(001). We find two distinct transport regimes as a function of gate voltage. At high carrier densities, a percolative metallic state is induced in which, at low temperatures, clear signatures of a Kondo effect are observed. At lower carrier densities, the resistance diverges at low temperatures and can be well described by a 2D variable range hopping model. We postulate that this derives from nonpercolative transport due to inhomogeneous electric fields from imperfectly ordered ions at the electrolyte-oxide interface.
我们研究了 SrTiO(3)(001) 表面的电解质门控诱导电导。我们发现,随着栅极电压的变化,存在两种不同的输运模式。在高载流子密度下,诱导出渗流金属态,在低温下,观察到明显的 Kondo 效应特征。在较低的载流子密度下,低温下的电阻发散,可以很好地用二维变程跳跃模型来描述。我们假设这是由于电解质-氧化物界面处离子排列不完美导致的非渗流电场引起的。