Electrically induced insulator-to-metal transition in InP-based ion-gated transistor.

With the growing awareness of energy savings and consumption for a sustainable ecosystem, the concept of iontronics, that is, controlling electronic devices with ions, has become critically important. Composite devices made of ions and solid materials have been investigated for diverse applications, ranging from energy storage to power generation, memory, biomimetics, and neuromorphic devices. In these studies, three terminal transistor configurations with liquid electrolytes have often been utilized because of their simple device structures and relatively easy fabrication processes. To date, oxide semiconductors and layered materials have mainly been used as active materials. However, inorganic compound semiconductors, which have a long history of basic and applied research, hardly function as channel materials in ion-gated transistors, partly because of the Schottky barrier at the electrode interface. Herein, we show that a typical group III-V compound semiconductor, InP, is available as a high-performance channel for ion-gated transistors with an on/off current ratio of ≈ 10 and a subthreshold swing as small as 93 mV/dec at room temperature. We fabricated AuGe/Ni contact electrodes via annealing to obtain the Ohmic contacts over a wide temperature range. The electrical resistance of InP was drastically decreased by the ionic liquid gating, which led to an electrically induced insulator-to-metal transition. Bulk compound semiconductors are well characterized and have relatively high carrier mobilities; thus, devices combined with electrolytes should prompt the development of iontronics research for novel device functionalities.