Shimizu Sunao, Shioya Hiroki, Hatano Takafumi, Miwa Kazumoto, Oiwa Akira, Ono Shimpei
Fucalty of Engineering, Toyama Prefectural University, Toyama, 939-0398, Japan.
R3 Institute for Newly-Emerging Science Design, Osaka University, Osaka, 560-8531, Japan.
Sci Rep. 2024 Dec 5;14(1):30364. doi: 10.1038/s41598-024-81685-4.
With the growing awareness of energy savings and consumption for a sustainable ecosystem, the concept of iontronics, that is, controlling electronic devices with ions, has become critically important. Composite devices made of ions and solid materials have been investigated for diverse applications, ranging from energy storage to power generation, memory, biomimetics, and neuromorphic devices. In these studies, three terminal transistor configurations with liquid electrolytes have often been utilized because of their simple device structures and relatively easy fabrication processes. To date, oxide semiconductors and layered materials have mainly been used as active materials. However, inorganic compound semiconductors, which have a long history of basic and applied research, hardly function as channel materials in ion-gated transistors, partly because of the Schottky barrier at the electrode interface. Herein, we show that a typical group III-V compound semiconductor, InP, is available as a high-performance channel for ion-gated transistors with an on/off current ratio of ≈ 10 and a subthreshold swing as small as 93 mV/dec at room temperature. We fabricated AuGe/Ni contact electrodes via annealing to obtain the Ohmic contacts over a wide temperature range. The electrical resistance of InP was drastically decreased by the ionic liquid gating, which led to an electrically induced insulator-to-metal transition. Bulk compound semiconductors are well characterized and have relatively high carrier mobilities; thus, devices combined with electrolytes should prompt the development of iontronics research for novel device functionalities.
随着人们对可持续生态系统中节能和能源消耗的意识不断提高，离子电子学的概念，即利用离子控制电子设备，变得至关重要。由离子和固体材料制成的复合设备已被研究用于从能量存储到发电、记忆、仿生和神经形态设备等各种应用。在这些研究中，具有液体电解质的三端晶体管配置经常被使用，因为它们的设备结构简单且制造过程相对容易。迄今为止，氧化物半导体和层状材料主要被用作活性材料。然而，经过长期基础和应用研究的无机化合物半导体在离子门控晶体管中几乎不能用作沟道材料，部分原因是电极界面处的肖特基势垒。在此，我们表明典型的III-V族化合物半导体InP可作为离子门控晶体管的高性能沟道，在室温下开/关电流比约为10，亚阈值摆幅低至93 mV/dec。我们通过退火制备了AuGe/Ni接触电极，以在较宽温度范围内获得欧姆接触。离子液体门控使InP的电阻急剧降低，导致电诱导的绝缘体-金属转变。体化合物半导体具有良好的特性且载流子迁移率相对较高；因此，与电解质结合的设备应会推动新型设备功能的离子电子学研究发展。
