Dhoot Anoop S, Yuen Jonathan D, Heeney Martin, McCulloch Iain, Moses Daniel, Heeger Alan J
Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
Proc Natl Acad Sci U S A. 2006 Aug 8;103(32):11834-7. doi: 10.1073/pnas.0605033103. Epub 2006 Jul 27.
We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10(15) cm(-2)) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 x 10(6) A/cm(2), and high metallic conductivities, 10(4) S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10(7) A/cm(2). Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is approximately 3.5 cm(2).V(-1).s(-1) at 297 K, comparable with that found in fully crystalline organic devices.
我们使用聚合物电解质作为栅极和栅极电介质，研究了聚（2,5-双（3-十四烷基噻吩-2-基）噻吩并[3,2-b]噻吩）场效应晶体管（FET）在非常高的场致载流子密度（10¹⁵ cm⁻²）下的载流子输运。在室温下，我们在FET沟道中发现了高电流密度，2×10⁶ A/cm²，以及高金属电导率，10⁴ S/cm；在4.2 K时，电流密度维持在10⁷ A/cm²。因此，金属导电性持续到低温。这些器件中的载流子迁移率在297 K时约为3.5 cm²·V⁻¹·s⁻¹，与完全结晶的有机器件中的迁移率相当。
