INSP, Université Pierre et Marie Curie, UMR 7588 au CNRS 4 place Jussieu, 75005 Paris, France.
Phys Rev Lett. 2012 Nov 16;109(20):206402. doi: 10.1103/PhysRevLett.109.206402.
Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated interstitial is unstable and transforms into a split interstitial configuration (N-N)(N). It is generated by particle irradiation with an introduction rate of a primary defect, pins the Fermi level at E(C)-1.0 eV for high fluences, and anneals out at 400 °C. The associated defect, the nitrogen vacancy, is observed by PAS only in the initial stage of irradiation.
通过电子顺磁共振、密度泛函理论和正电子湮没谱（PAS）的结合，我们在 GaN 中确定了氮间隙缺陷。孤立的间隙是不稳定的，并转化为分裂间隙构型（N-N）（N）。它是由粒子辐照产生的，初始缺陷的引入率为，在高剂量下将费米能级钉扎在 E(C)-1.0 eV，在 400°C 下退火。相关缺陷，即氮空位，仅在辐照的初始阶段通过 PAS 观察到。
