Sadhujan Sumesh, Harilal Sherina, Zhang Kefan, Abu Much Riam, AbuBekr Abdullah, Asleh Ayat, Shalabny Awad, Sweedan Amro, Yulianto Nursidik, Refino Andam Deatama, Wasisto Hutomo Suryo, Abu Madegam Laila, Igbaria Aeid, Pavan Mariela J, Bashouti Muhammad Y
Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, J. Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Midreshset Ben-Gurion, Building 26, 8499000, Israel.
The Academic Arab College for Education in Israel-Haifa, 22 Hahashmal St., Haifa 33145, Israel.
Nano Lett. 2025 Jun 4;25(22):9118-9124. doi: 10.1021/acs.nanolett.5c01839. Epub 2025 May 19.
Nanowire surfaces are of particular interest, primarily for their potential in optoelectronic applications. Thus, different surface treatments have been performed to develop methods for controlling the surface effect. Here, we successfully shifted the n-type surface states in n-type GaN nanorods to p-type states in the challenging regime, i.e., the blue regime. This was achieved through reverse charge transfer driven by an electrostatic field induced by surface strain. The p-type surface state demonstrates an inverted photovoltage mechanism, as well as a stable blue photoluminescence at room temperature under ambient conditions, within the n-type GaN nanorods. The inverted charge transfer at the surface of the GaN nanorod array was determined by X-ray photoelectron spectroscopy (XPS), surface photovoltage, Kelvin probe, Raman, and photoluminescence measurements. The mechanism and the study's conclusions have been supported experimentally and theoretically. This surface state inversion approach offers a new strategy for regulating p-n junctions in low-dimensional nanomaterials.
纳米线表面尤其引人关注，主要是因其在光电子应用方面的潜力。因此，人们已经进行了不同的表面处理，以开发控制表面效应的方法。在此，我们成功地在具有挑战性的区域，即蓝光区域，将n型GaN纳米棒中的n型表面态转变为p型表面态。这是通过由表面应变诱导的静电场驱动的反向电荷转移实现的。p型表面态展示了一种反向光电压机制，以及在室温下环境条件下n型GaN纳米棒内稳定的蓝光光致发光。通过X射线光电子能谱（XPS）、表面光电压、开尔文探针、拉曼光谱和光致发光测量确定了GaN纳米棒阵列表面的反向电荷转移。该机制和研究结论得到了实验和理论的支持。这种表面态反转方法为调控低维纳米材料中的p-n结提供了一种新策略。
