Ramírez J M, Berencén Y, Ferrarese Lupi F, Navarro-Urrios D, Anopchenko A, Tengattini A, Prtljaga N, Pavesi L, Rivallin P, Fedeli J M, Garrido B
MIND-IN2UB, Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain.
Opt Express. 2012 Dec 17;20(27):28808-18. doi: 10.1364/OE.20.028808.
Electrically driven Er(3+) doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er(3+) doped active layers were fabricated in the slot region: a pure SiO(2) and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er(3+) ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
展示了在1530nm处发射的电驱动掺铒（Er(3+)）硅槽波导。在槽区域制造了两种不同的掺铒（Er(3+)）有源层：纯SiO₂和富硅氧化物。使用波导的脉冲偏振驱动来表征1mm长波导中电致发光（EL）和信号探针传输的时间响应。注入载流子吸收损耗调制EL信号，并且由于载流子寿命远小于Er(3+)离子的寿命，在偏振关闭时观察到尖锐的EL峰。结合锁相放大器技术的时间分辨电泵浦和探针测量能够量化注入载流子吸收损耗。我们发现消光比为6dB，无源传播损耗约为4dB/mm，在120μW的有效直流功耗下光谱带宽>25nm。所有这些性能表明这些器件可作为电光调制器使用。
