温度相关的霍尔和场效应迁移率在强耦合全无机纳米晶阵列中。
Temperature-dependent Hall and field-effect mobility in strongly coupled all-inorganic nanocrystal arrays.
机构信息
Department of Chemistry and James Franck Institute, University of Chicago , Illinois 60637, United States.
出版信息
Nano Lett. 2014 Feb 12;14(2):653-62. doi: 10.1021/nl403889u. Epub 2014 Jan 30.
We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se4(2-) and Cu7S4(-)). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm(2)/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.
我们报告了由胶体纳米晶（NC）阵列的温度依赖的霍尔效应特性制备的纳米晶（NC）阵列，这些胶体纳米晶由金属硫属化物配合物（MCC）配体（In2Se4(2-) 和 Cu7S4(-)）覆盖。我们的研究表明，霍尔效应测量是探索 NC 固体基本性质的一种有力方法。我们发现，用铜硫化物 MCC 配体覆盖的 5.3nm InAs NC 薄膜在超过 16cm2/(V s)的情况下表现出高霍尔迁移率值。我们还表明，MCC 配体的性质可以控制 NC 固体中的掺杂。对温度依赖的霍尔和场效应迁移率值的比较研究提供了有关电荷输运机制的有价值的见解，并指出在全无机 InAs NC 固体中从弱耦合到强耦合的转变。
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