Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States.
J Am Chem Soc. 2013 Feb 6;135(5):1806-15. doi: 10.1021/ja309289u. Epub 2013 Jan 25.
Three structurally identical polymers, except for the number of fluorine substitutions (0, 1, or 2) on the repeat unit (BnDT-DTBT), are investigated in detail, to further understand the impact of these fluorine atoms on open circuit voltage (V(oc)), short circuit current (J(sc)), and fill factor (FF) of related solar cells. While the enhanced V(oc) can be ascribed to a lower HOMO level of the polymer by adding more fluorine substituents, the improvement in J(sc) and FF are likely due to suppressed charge recombination. While the reduced bimolecular recombination with raising fluorine concentration is confirmed by variable light intensity studies, a plausibly suppressed geminate recombination is implied by the significantly increased change of dipole moment between the ground and excited states (Δμ(ge)) for these polymers as the number of fluorine substituents increases. Moreover, the 2F polymer (PBnDT-DTffBT) exhibits significantly more scattering in the in-plane lamellar stacking and out-of-plane π-π stacking directions, observed with GIWAXS. This indicates that the addition of fluorine leads to a more face-on polymer crystallite orientation with respect to the substrate, which could contribute to the suppressed charge recombination. R-SoXS also reveals that PBnDT-DTffBT has larger and purer polymer/fullerene domains. The higher domain purity is correlated with an observed decrease in PCBM miscibility in polymer, which drops from 21% (PBnDT-DTBT) to 12% (PBnDT-DTffBT). The disclosed "fluorine" impact not only explains the efficiency increase from 4% of PBnDT-DTBT (0F) to 7% with PBnDT-DTffBT (2F) but also suggests fluorine substitution should be generally considered in the future design of new polymers.
三种结构完全相同的聚合物,除了重复单元(BnDT-DTBT)上的氟取代数量(0、1 或 2)不同之外,都进行了详细的研究,以进一步了解这些氟原子对开路电压(V(oc))、短路电流(J(sc))和填充因子(FF)的影响。虽然通过增加更多的氟取代基,可以使聚合物的 HOMO 能级降低,从而提高 V(oc),但 J(sc)和 FF 的提高可能是由于抑制了电荷复合。虽然通过增加氟浓度降低了双分子复合,但通过可变光强研究证实了这一点,同时还暗示了由于氟取代基数量的增加,聚合物的基态和激发态之间的偶极矩变化(Δμ(ge))显著增加,从而抑制了复合。此外,2F 聚合物(PBnDT-DTffBT)在面内层状堆积和面外π-π堆积方向上表现出更明显的散射,这可以通过 GIWAXS 观察到。这表明,氟的加入导致聚合物相对于衬底具有更面向的晶面取向,这可能有助于抑制电荷复合。R-SoXS 还表明,PBnDT-DTffBT 具有更大和更纯的聚合物/富勒烯畴。更高的畴纯度与观察到的 PCBM 在聚合物中的混溶性降低有关,从 PBnDT-DTBT(0F)的 21%下降到 PBnDT-DTffBT(2F)的 12%。所揭示的“氟”影响不仅解释了从 PBnDT-DTBT(0F)的 4%到 PBnDT-DTffBT(2F)的 7%的效率提高,而且还表明在未来新聚合物的设计中应普遍考虑氟取代基。