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电子受体ITIC对有机光伏纳米异质结的卤化效应

The Halogenation Effects of Electron Acceptor ITIC for Organic Photovoltaic Nano-Heterojunctions.

作者信息

Wang Yu, Zhang Cairong, Yang Bing, Yuan Lihua, Gong Jijun, Liu Zijiang, Wu Youzhi, Chen Hongshan

机构信息

Department of Applied Physics, Lanzhou University of Technology, Lanzhou 730050, China.

Department of Physics, Lanzhou City University, Lanzhou 730070, China.

出版信息

Nanomaterials (Basel). 2021 Dec 16;11(12):3417. doi: 10.3390/nano11123417.

Abstract

Molecular engineering plays a critical role in the development of electron donor and acceptor materials for improving power conversion efficiency (PCE) of organic photovoltaics (OPVs). The halogenated acceptor materials in OPVs have shown high PCE. Here, to investigate the halogenation mechanism and the effects on OPV performances, based on the density functional theory calculations with the optimally tuned screened range-separated hybrid functional and the consideration of solid polarization effects, we addressed the halogenation effects of acceptor ITIC, which were modeled by bis-substituted ITIC with halogen and coded as IT-2X (X = F, Cl, Br), and PBDB-T:ITIC, PBDB-T:IT-2X (X = F, Cl, Br) complexes on their geometries, electronic structures, excitations, electrostatic potentials, and the rate constants of charge transfer, exciton dissociation (ED), and charge recombination processes at the heterojunction interface. The results indicated that halogenation of ITIC slightly affects molecular geometric structures, energy levels, optical absorption spectra, exciton binding energies, and excitation properties. However, the halogenation of ITIC significantly enlarges the electrostatic potential difference between the electron acceptor and donor PBDB-T with the order from fluorination and chlorination to bromination. The halogenation also increases the transferred charges of CT states for the complexes. Meanwhile, the halogenation effects on CT energies and electron process rates depend on different haloid elements. No matter which kinds of haloid elements were introduced in the halogenation of acceptors, the ED is always efficient in these OPV devices. This work provides an understanding of the halogenation mechanism, and is also conducive to the designing of novel materials with the aid of the halogenation strategy.

摘要

分子工程在开发用于提高有机光伏(OPV)功率转换效率(PCE)的电子供体和受体材料方面起着关键作用。OPV中的卤化受体材料已显示出高PCE。在此,为了研究卤化机理及其对OPV性能的影响,基于采用最优调谐的屏蔽范围分离混合泛函并考虑固体极化效应的密度泛函理论计算,我们研究了受体ITIC的卤化效应,该效应通过用卤素双取代的ITIC进行建模并编码为IT-2X(X = F、Cl、Br),以及PBDB-T:ITIC、PBDB-T:IT-2X(X = F、Cl、Br)复合物在其几何结构、电子结构、激发、静电势以及异质结界面处的电荷转移、激子解离(ED)和电荷复合过程的速率常数方面的影响。结果表明,ITIC的卤化对分子几何结构、能级、光吸收光谱、激子结合能和激发性质的影响较小。然而,ITIC的卤化显著增大了电子受体与供体PBDB-T之间的静电势差,其顺序为氟化、氯化到溴化。卤化还增加了复合物CT态的转移电荷。同时,卤化对CT能量和电子过程速率的影响取决于不同的卤素元素。无论在受体卤化中引入哪种卤素元素,在这些OPV器件中激子解离总是有效的。这项工作有助于理解卤化机理,也有利于借助卤化策略设计新型材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ad7/8708652/e544e854e29d/nanomaterials-11-03417-g001.jpg

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