Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Phys Chem Chem Phys. 2013 Feb 21;15(7):2345-50. doi: 10.1039/c2cp44406b. Epub 2013 Jan 8.
Broadband antireflection of silicon has been realized by combining black silicon, surface passivation and surface plasmons. Black silicon, fabricated by Ag assisted chemical etching, was employed here to reduce the reflection of incident light with wavelengths below 1100 nm. Due to the increased bandgap caused by the quantum confinement effect and enhanced backward-scattering in our black silicon, light trapping was diminished at the wavelengths above 1100 nm. Ag nanoparticles were deposited on black silicon to obtain the lowest reflectivity at the wavelengths above 1100 nm. Compared with traditionally textured multicrystalline silicon, the average reflectivity of passivated black multicrystalline silicon patterned with 5 nm mass thickness of Ag was decreased to 5.7% in the wavelength range from 300 nm to 1100 nm and was reduced by 20.2% in the wavelength range from 1100 nm to 1400 nm. The surface plasmon effect of the Ag nanoparticles on the black silicon was also demonstrated by surface enhanced Raman scattering, which was observed in the Ag nanoparticle patterned black silicon after being immersed in rhodamine 6g.
通过结合黑硅、表面钝化和表面等离子体，实现了硅的宽带抗反射。这里采用 Ag 辅助化学刻蚀制备的黑硅来降低低于 1100nm 波长的入射光的反射。由于量子限制效应引起的能带隙增加和我们的黑硅中增强的后向散射，在 1100nm 以上的波长处光捕获减少。在黑硅上沉积 Ag 纳米颗粒以在 1100nm 以上的波长处获得最低的反射率。与传统纹理化多晶硅相比，在 300nm 至 1100nm 波长范围内，钝化的具有 5nm 质量厚度 Ag 的图案化黑多晶硅的平均反射率降低到 5.7%，在 1100nm 至 1400nm 波长范围内降低了 20.2%。Ag 纳米颗粒对黑硅的表面等离子体效应也通过表面增强拉曼散射得到了证明，在浸入罗丹明 6g 后，在 Ag 纳米颗粒图案化的黑硅中观察到了这种效应。
