Lu Ren, Wang Yewu, Gu Lin, Wang Wei, Fang Yanjun, Sha Jian
Department of Physics & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
Opt Express. 2013 Jul 29;21(15):17484-91. doi: 10.1364/OE.21.017484.
The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.
基于金属辅助化学蚀刻（MaCE）法制备的硅纳米线（SiNWs）构建的SiO(2)@AgNPs@p-SiNWs复合结构，旨在实现在宽波长范围（300 - 2500 nm）内显著的反射抑制。特别是，该结构在620 - 1950 nm的宽范围内反射率甚至可低于0.3%。研究还表明，SiO(2)覆盖层在复合结构的显著反射抑制中起主导作用。
