Omar Halo Dalshad, Hashim Md Roslan, Pakhuruddin Mohd Zamir
School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia.
Department of Physics, Faculty of Science and Health, Koya University, Koya KOY45, Kurdistan Region, Iraq.
Heliyon. 2022 Aug 2;8(8):e10072. doi: 10.1016/j.heliyon.2022.e10072. eCollection 2022 Aug.
This work investigates properties of PEDOT:PSS on flexible black silicon (bSi) for a hybrid solar cell on textured polyimide (PI) substrate. The flexible bSi is formed by thinning down crystalline silicon (cSi) wafers to 65 μm thickness, followed by fabrication of bSi nanowires (NWs) on the wafer surface using one-step metal-catalyzed electroless etching (MCEE) technique. The resulting bSi NWs exhibit an average diameter of around 90-100 nm and length of 900 nm. Then, PEDOT:PSS with a thickness of 150 nm is coated on the flexible cSi and bSi NWs. For texturing of PI, copper-seeding technique is used. The planar and textured PI substrates are then attached to the back of the flexible cSi and bSi. The PEDOT:PSS/flexible bSi on PI substrate shows lower broadband reflection when compared to PEDOT:PSS/flexible cSi. This is due to the presence of bSi NWs on wafer surface which leads to refractive index grading effect. The PEDOT:PSS/flexible bSi solar cell on the textured PI substrate demonstrates conversion efficiency of 2.58%. This is contributed by the increased short-circuit current density (J) in the device (when compared to the device on planar PI), owing to the enhanced light absorption above wavelength of 800 nm.
本工作研究了用于纹理化聚酰亚胺（PI）衬底上的混合太阳能电池的聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）在柔性黑硅（bSi）上的性能。柔性bSi是通过将晶体硅（cSi）晶圆减薄至65μm厚度形成的，随后使用一步金属催化化学蚀刻（MCEE）技术在晶圆表面制备bSi纳米线（NWs）。所得bSi NWs的平均直径约为90 - 100nm，长度为900nm。然后，将厚度为150nm的PEDOT:PSS涂覆在柔性cSi和bSi NWs上。对于PI的纹理化，使用了铜种子技术。然后将平面和纹理化的PI衬底附着到柔性cSi和bSi的背面。与PEDOT:PSS/柔性cSi相比，PI衬底上的PEDOT:PSS/柔性bSi表现出更低的宽带反射。这是由于晶圆表面存在bSi NWs，导致了折射率分级效应。纹理化PI衬底上的PEDOT:PSS/柔性bSi太阳能电池的转换效率为2.58%。这得益于器件中短路电流密度（J）的增加（与平面PI上的器件相比），这是由于在波长800nm以上的光吸收增强所致。
