State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China.
Nanoscale Res Lett. 2013 Jan 24;8(1):49. doi: 10.1186/1556-276X-8-49.
The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.
六方氮化硼的绝缘特性限制了其在微电子学中的应用。在本文中，通过在异丙醇中用氢氟酸掺杂从块状氮化硼剥离得到的氮化硼纳米片，采用简便的化学溶液法制备了氟化六方氮化硼纳米片；有趣的是，这些氮化硼纳米片表现出典型的半导体特性，这是在新的扫描隧道显微镜-透射电子显微镜支架上进行研究的。由于这种性质从绝缘体变为半导体，这些纳米片将能够扩展其在设计和制造电子纳米器件中的应用。
