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通过在铜箔上进行顺序脉冲化学气相沉积,使用BCl和NH合成原子级薄的h-BN层。

Synthesis of Atomically Thin h-BN Layers Using BCl and NH by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil.

作者信息

Oh Hongseok, Yi Gyu-Chul

机构信息

Department of Physics and Integrative Institute of Basic Science, Soongsil University, Seoul 06978, Korea.

Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.

出版信息

Nanomaterials (Basel). 2021 Dec 29;12(1):80. doi: 10.3390/nano12010080.

Abstract

The chemical vapor deposition of hexagonal boron nitride layers from BCl and NH is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl and NH. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a polycrystalline structure. The relationship between growth temperature and crystallinity of the h-BN film is investigated using transmission electron microscopy and Raman spectroscopy. Investigation on the initial growth mode achieved by the suppression of precursor supply revealed the formation of triangular domains and existence of preferred crystal orientations. The possible growth mechanism of h-BN in this sequential-pulsed CVD is discussed.

摘要

通过BCl₃和NH₃进行六方氮化硼层的化学气相沉积对于具有高可控性的可扩展合成非常有益,但诸如腐蚀性反应或副产物形成等多重挑战阻碍了其成功演示。在此,我们报告了使用BCl₃和NH₃在铜箔上合成多晶六方氮化硼(h-BN)层。前驱体的顺序脉冲注入导致形成具有多晶结构的原子级薄h-BN层。使用透射电子显微镜和拉曼光谱研究了h-BN薄膜的生长温度与结晶度之间的关系。通过抑制前驱体供应实现的初始生长模式的研究揭示了三角形畴的形成和优选晶体取向的存在。讨论了这种顺序脉冲化学气相沉积中h-BN可能的生长机制。

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