Shu G W, Lin J Y, Jian H T, Shen J L, Wang S C, Chou C L, Chou W C, Wu C H, Chiu C H, Kuo H C
Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan.
Opt Express. 2013 Jan 14;21 Suppl 1:A123-30. doi: 10.1364/OE.21.00A123.
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed.
已对三结InGaP/InGaAs/Ge太阳能电池中的空间分辨电致发光（EL）图像进行了研究，以证明子电池耦合效应。在用能量低于顶部子电池有源层带隙但高于中间子电池带隙的红外光照射时，顶部子电池的EL会淬灭。通过分析EL强度与辐照水平的函数关系，发现耦合的p-n结结构和光伏效应是观察到的EL淬灭的原因。基于多结二极管中的光学耦合和光开关效应，提出了一种红外图像传感器的概念。
