Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
ACS Nano. 2013 Mar 26;7(3):2292-301. doi: 10.1021/nn4005473. Epub 2013 Mar 8.
The internal transport and recombination parameters of solid-state dye-sensitized solar cells (ssDSCs) using the amorphous organic semiconductor 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-MeOTAD) as a hole transport material (HTM) are investigated using electrical impedance spectroscopy. Devices were fabricated using flat and nanostructured TiO2 and compared to systems using nanostructured ZrO2 to differentiate between the transport processes within the different components of the ssDSC. The effect of chemically p-doping the HTM on its transport was investigated, and its temperature dependence was examined and analyzed using the Arrhenius equation. Using this approach the activation energy of the hole hopping transport within the undoped spiro-MeOTAD film was determined to be 0.34 ± 0.02 and 0.40 ± 0.02 eV for the mesoporous TiO2 and ZrO2 systems, respectively.
采用无定型有机半导体 2,2',7,7'-四(N,N-二对甲氧基苯基氨基)-9,9'-螺二芴（spiro-MeOTAD）作为空穴传输材料（HTM）的固态染料敏化太阳能电池（ssDSC）的内部传输和复合参数，使用交流阻抗谱进行了研究。使用平面和纳米结构 TiO2 制造了器件，并与使用纳米结构 ZrO2 的系统进行了比较，以区分 ssDSC 不同组件内的传输过程。研究了化学 p 掺杂 HTM 对其传输的影响，并使用 Arrhenius 方程对其温度依赖性进行了测试和分析。通过这种方法，确定未掺杂 spiro-MeOTAD 薄膜中的空穴跳跃传输的活化能分别为 0.34 ± 0.02 和 0.40 ± 0.02 eV，对于介孔 TiO2 和 ZrO2 系统而言。
