Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.
Opt Lett. 2013 Feb 15;38(4):395-7. doi: 10.1364/OL.38.000395.
Ag nanocone enhanced light trapping in the silicon substrate is numerically investigated. For a wide range of the dielectric spacer thickness, the normalized scattering cross section of the rear located particles is higher than that of the front located particles, which is contrary to previous reports. This design not only avoids the conflict with the detrimental Fano effect but is also beneficial to the rear located particles. The fraction of the incident light scattered into silicon is calculated. The path length enhancement is assessed. The Ag nanocone shows highly competitive light-trapping potential.
本文数值研究了硅衬底中 Ag 纳米锥增强的光捕获。对于宽范围的介电间隔层厚度,位于后部的颗粒的归一化散射截面高于位于前部的颗粒的散射截面,这与之前的报告相反。这种设计不仅避免了与有害的 Fano 效应的冲突,而且对位于后部的颗粒也有利。计算了散射到硅中的入射光的分数。评估了光程增强。Ag 纳米锥显示出很强的光捕获潜力。