Division of Solid State Physics and the Nanometer Structure Consortium (nmC@LU), Lund University, Lund, Sweden.
Opt Lett. 2013 Mar 1;38(5):730-2. doi: 10.1364/OL.38.000730.
Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.
半导体纳米线阵列在下一代光电和光探测方面显示出了巨大的潜力,但仍需要更深入地了解光与纳米线的相互作用。在这里,我们从静电极限到纳米光子学范围,再到几何光学极限,连续地研究了垂直 InP 纳米线阵列对光的吸收。我们展示了如何通过改变阵列中半导体材料的体积吸收,使吸收强度在 20 倍的范围内变化,从比体半导体样品弱 10 倍到强 20 倍。