Saurabh Siddharth, Hossain M Khalid, Singh Sadhna, Agnihotri Suneet Kumar, Samajdar D P
Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design and Manufacturing Jabalpur 482005 India.
Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission Dhaka 1349 Bangladesh
RSC Adv. 2023 Mar 29;13(15):9878-9891. doi: 10.1039/d3ra00039g. eCollection 2023 Mar 27.
In this article, we have performed a comparative analysis of six different types of nanostructures that can improve photon management for photovoltaic applications. These nanostructures act as anti-reflective structures by improving the absorption characteristics and tailoring the optoelectronic properties of the associated devices. The absorption enhancement in indium phosphide (InP) and silicon (Si) based cylindrical nanowires (CNWs) and rectangular nanowires (RNWs), truncated nanocones (TNCs), truncated nanopyramids (TNPs), inverted truncated nanocones (ITNCs), and inverted truncated nanopyramids (ITNPs) are computed using the finite element method (FEM) based commercial COMSOL Multiphysics package. The influence of geometrical dimensions of the investigated nanostructures such as period (), diameter (), width (), filling ratio (FR), bottom and ( / ), and top and ( / ) on the optical performance are analyzed in detail. Optical short circuit current density ( ) is computed using the absorption spectra. The results of numerical simulations indicate that InP nanostructures are optically superior to Si nanostructures. In addition to this, the InP TNP generates an optical short circuit current density ( ) of 34.28 mA cm, which is ∼10 mA cm higher than its Si counterpart. The effect of incident angle on the ultimate efficiency of the investigated nanostructures in transverse electric (TE) and transverse magnetic (TM) modes is also explored. Theoretical insights into the design strategies of different nanostructures proposed in this article will act as a benchmark for choosing the device dimensions of appropriate nanostructures for the fabrication of efficient photovoltaic devices.
在本文中，我们对六种不同类型的纳米结构进行了比较分析，这些纳米结构可改善光伏应用中的光子管理。这些纳米结构通过改善吸收特性和调整相关器件的光电特性来充当抗反射结构。使用基于有限元方法（FEM）的商业COMSOL Multiphysics软件包计算了磷化铟（InP）和硅（Si）基圆柱形纳米线（CNW）、矩形纳米线（RNW）、截顶纳米锥（TNC）、截顶纳米金字塔（TNP）、倒置截顶纳米锥（ITNC）和倒置截顶纳米金字塔（ITNP）中的吸收增强情况。详细分析了所研究纳米结构的几何尺寸，如周期（）、直径（）、宽度（）、填充率（FR）、底部和（/）以及顶部和（/）对光学性能的影响。利用吸收光谱计算光学短路电流密度（）。数值模拟结果表明，InP纳米结构在光学性能上优于Si纳米结构。除此之外，InP TNP产生的光学短路电流密度（）为34.28 mA cm，比其Si对应物高约10 mA cm。还探讨了入射角对所研究纳米结构在横向电场（TE）和横向磁场（TM）模式下最终效率的影响。本文提出的不同纳米结构设计策略的理论见解将为选择合适纳米结构的器件尺寸以制造高效光伏器件提供基准。
