Iuchi T, Toyoda Y, Seo T
School of Engineering, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Japan.
Rev Sci Instrum. 2013 Feb;84(2):024904. doi: 10.1063/1.4791793.
We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9-4.8 μm), irrespective of the dielectric film thickness and the substrate resistivity, which depends on the dopant concentration. The temperature measurements were estimated to have expanded uncertainties (k = 2) of less than 5 °C. With a view to practically applying these methods, we investigated a method to reduce the intense background radiance produced by high-intensity heating lamps. We found that the background radiance can be greatly reduced by using a radiometer that is sensitive to wavelengths of 4.5 or 4.8 μm and suitable geometrical arrangements of a quartz plate. This opens up the possibility of using the two proposed radiation thermometry methods in practical applications.
我们使用光学偏振技术研究了硅片的光谱发射率和定向发射率。基于模拟和实验结果，我们开发了两种用于硅片的辐射测温方法：一种基于偏振发射率不变条件，另一种基于p偏振和s偏振辐射率之比与偏振发射率之间的关系。这些方法可以在600℃以上的温度和较宽的波长范围（0.9 - 4.8μm）内进行，与取决于掺杂剂浓度的介电膜厚度和衬底电阻率无关。温度测量的扩展不确定度（k = 2）估计小于5℃。为了实际应用这些方法，我们研究了一种减少高强度加热灯产生的强烈背景辐射的方法。我们发现，通过使用对4.5或4.8μm波长敏感的辐射计以及石英板的合适几何布置，可以大大降低背景辐射。这为在实际应用中使用所提出的两种辐射测温方法开辟了可能性。
