Radiation Laboratory and Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA.
J Phys Condens Matter. 2013 Apr 10;25(14):144203. doi: 10.1088/0953-8984/25/14/144203. Epub 2013 Mar 11.
Spatial mapping of energy relaxation in graphene oxide (GO) thin films has been imaged using transient absorption microscopy (TAM). Correlated AFM images allow us to accurately determine the thickness of the GO films. In contrast to previous studies, correlated TAM-AFM allows determination of the effect of interactions of GO with the substrate and between stacked GO layers on the relaxation dynamics. Our results show that energy relaxation in GO flakes has little dependence on the substrate, number of stacked layers, and excitation intensity. This is in direct contrast to pristine graphene, where these factors have great consequences in energy relaxation. This suggests intrinsic factors rather than extrinsic ones dominate the excited state dynamics of GO films.
使用瞬态吸收显微镜（TAM）对氧化石墨烯（GO）薄膜中的能量弛豫进行了空间映射。相关的原子力显微镜（AFM）图像使我们能够准确地确定 GO 薄膜的厚度。与先前的研究相比，相关的 TAM-AFM 允许确定 GO 与衬底之间的相互作用以及堆叠的 GO 层之间的相互作用对弛豫动力学的影响。我们的结果表明，GO 薄片中的能量弛豫几乎不受衬底、堆叠层数和激发强度的影响。这与原始石墨烯形成了直接对比，在原始石墨烯中，这些因素对能量弛豫有很大的影响。这表明，在 GO 薄膜的激发态动力学中，起主导作用的是固有因素，而不是外在因素。
