School of Materials, University of Manchester, Grosvenor Street, M13 9PL, UK.
ACS Nano. 2013 Apr 23;7(4):3104-17. doi: 10.1021/nn305223y. Epub 2013 Mar 28.
We have investigated the influence of gas phase chemistry on the chemical vapor deposition of graphene in a hot wall reactor. A new extended parameter space for graphene growth was defined through literature review and experimentation at low pressures (≥0.001 mbar). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy, and dark field optical microscopy, with the latter showing promise as a rapid and nondestructive characterization technique for graphene films. The equilibrium gas compositions have been calculated across this parameter space. Correlations between the graphene films grown and prevalent species in the equilibrium gas phase revealed that deposition conditions associated with a high acetylene equilibrium concentration lead to good quality graphene deposition, and conditions that stabilize large hydrocarbon molecules in the gas phase result in films with multiple defects. The transition between lobed and hexagonal graphene islands was found to be linked to the concentration of the monatomic hydrogen radical, with low concentrations associated with hexagonal islands.
我们研究了气相化学对热壁反应器中石墨烯化学气相沉积的影响。通过文献综述和低压实验（≥0.001 毫巴），定义了一个新的扩展石墨烯生长参数空间。通过扫描电子显微镜、拉曼光谱和暗场光学显微镜对沉积薄膜进行了表征，后者有望成为一种快速、无损的石墨烯薄膜表征技术。在这个参数空间中计算了平衡气相组成。在生长的石墨烯薄膜和平衡气相中普遍存在的物质之间的相关性表明，与乙炔平衡浓度高相关的沉积条件导致高质量的石墨烯沉积，而在气相中稳定大碳氢化合物分子的条件导致具有多个缺陷的薄膜。发现叶状和六方石墨烯岛之间的转变与单原子氢自由基的浓度有关，低浓度与六方岛有关。
