Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu, 610031, People's Republic of China.
Nanoscale Res Lett. 2013 Mar 25;8(1):137. doi: 10.1186/1556-276X-8-137.
Although monocrystalline silicon reveals strong anisotropic properties on various crystal planes, the friction-induced nanofabrication can be successfully realized on Si(100), Si(110), and Si(111) surfaces. Under the same loading condition, the friction-induced hillock produced on Si(100) surface is the highest, while that produced on Si(111) surface is the lowest. The formation mechanism of hillocks on various silicon crystal planes can be ascribed to the structural deformation of crystal matrix during nanoscratching. The silicon crystal plane with lower elastic modulus can lead to larger pressed volume during sliding, facilitating more deformation in silicon matrix and higher hillock. Meanwhile, the structures of Si-Si bonds on various silicon crystal planes show a strong effect on the hillock formation. High density of dangling bonds can cause much instability of silicon surface during tip disturbing, which results in the formation of more amorphous silicon and high hillock during the friction process. The results will shed new light on nanofabrication of monocrystalline silicon.
虽然单晶硅在各个晶体面上表现出强烈的各向异性，但在 Si(100)、Si(110)和 Si(111)表面上，摩擦诱导的纳米制造可以成功实现。在相同的加载条件下，Si(100)表面上产生的摩擦诱导凸起最高，而 Si(111)表面上产生的凸起最低。在各种硅晶体面上形成凸起的形成机制可以归因于纳米划痕过程中晶体基质的结构变形。弹性模量较低的硅晶体平面在滑动过程中会导致更大的受压体积，从而促进更多的硅基质变形和更高的凸起。同时，各种硅晶体面上的 Si-Si 键结构对凸起的形成有很强的影响。高浓度的悬空键会导致在针尖干扰过程中硅表面极不稳定，从而在摩擦过程中形成更多的非晶硅和高凸起。这些结果将为单晶硅的纳米制造提供新的思路。
