Miyake Shojiro, Suzuki Shota
Department of Innovative System Engineering, Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro-machi, Saitama 345-8501, Japan.
Nanoscale Res Lett. 2014 Aug 31;9(1):455. doi: 10.1186/1556-276X-9-455. eCollection 2014.
The properties of mechanically and electrically processed silicon surfaces were evaluated by atomic force microscopy (AFM). Silicon specimens were processed using an electrically conductive diamond tip with and without vibration. After the electrical processing, protuberances were generated and the electric current through the silicon surface decreased because of local anodic oxidation. Grooves were formed by mechanical processing without vibration, and the electric current increased. In contrast, mechanical processing with vibration caused the surface to protuberate and the electrical resistance increased similar to that observed for electrical processing. With sequential processing, the local oxide layer formed by electrical processing can be removed by mechanical processing using the same tip without vibration. Although the electrical resistance is decreased by the mechanical processing without vibration, additional electrical processing on the mechanically processed area further increases the electrical resistance of the surface.
通过原子力显微镜（AFM）评估了机械加工和电加工硅表面的特性。使用带有和不带有振动的导电金刚石尖端对硅试样进行加工。电加工后，由于局部阳极氧化产生了突起，并且通过硅表面的电流降低。在无振动的情况下通过机械加工形成了沟槽，电流增加。相比之下，有振动的机械加工导致表面突起，并且电阻增加，这与电加工时观察到的情况类似。通过顺序加工，电加工形成的局部氧化层可以通过使用相同的无振动尖端进行机械加工来去除。尽管无振动的机械加工会降低电阻，但在机械加工区域上进行额外的电加工会进一步增加表面的电阻。
