Molecular Structure and Function, Hospital for Sick Children, Toronto, Ontario M5G 1X8, Canada.
J Gen Physiol. 2013 Apr;141(4):445-65. doi: 10.1085/jgp.201210856.
The topological similarity of voltage-gated proton channels (H(V)1s) to the voltage-sensing domain (VSD) of other voltage-gated ion channels raises the central question of whether H(V)1s have a similar structure. We present the construction and validation of a homology model of the human H(V)1 (hH(V)1). Multiple structural alignment was used to construct structural models of the open (proton-conducting) state of hH(V)1 by exploiting the homology of hH(V)1 with VSDs of K(+) and Na(+) channels of known three-dimensional structure. The comparative assessment of structural stability of the homology models and their VSD templates was performed using massively repeated molecular dynamics simulations in which the proteins were allowed to relax from their initial conformation in an explicit membrane mimetic. The analysis of structural deviations from the initial conformation based on up to 125 repeats of 100-ns simulations for each system reveals structural features consistently retained in the homology models and leads to a consensus structural model for hH(V)1 in which well-defined external and internal salt-bridge networks stabilize the open state. The structural and electrostatic properties of this open-state model are compatible with proton translocation and offer an explanation for the reversal of charge selectivity in neutral mutants of Asp(112). Furthermore, these structural properties are consistent with experimental accessibility data, providing a valuable basis for further structural and functional studies of hH(V)1. Each Arg residue in the S4 helix of hH(V)1 was replaced by His to test accessibility using Zn(2+) as a probe. The two outermost Arg residues in S4 were accessible to external solution, whereas the innermost one was accessible only to the internal solution. Both modeling and experimental data indicate that in the open state, Arg(211), the third Arg residue in the S4 helix in hH(V)1, remains accessible to the internal solution and is located near the charge transfer center, Phe(150).
电压门控质子通道(H(V)1s)与其他电压门控离子通道的电压感应结构域(VSD)的拓扑相似性提出了一个核心问题,即 H(V)1s 是否具有相似的结构。我们提出了一种人源 H(V)1(hH(V)1)同源模型的构建和验证。通过利用 hH(V)1 与已知三维结构的 K(+)和 Na(+)通道 VSD 的同源性,我们使用多重结构比对来构建 hH(V)1 的开放(质子传导)状态的结构模型。使用大规模重复分子动力学模拟对同源模型及其 VSD 模板的结构稳定性进行了比较评估,在模拟中,允许蛋白质在明确定义的膜模拟物中从其初始构象松弛。基于每个系统高达 125 次 100-ns 模拟的初始构象的结构偏差分析,揭示了在同源模型中一致保留的结构特征,并导致 hH(V)1 的共识结构模型,其中明确的外部和内部盐桥网络稳定了开放状态。该开放状态模型的结构和静电特性与质子迁移兼容,并为中性突变体 Asp(112)中电荷选择性反转提供了解释。此外,这些结构特性与实验可及性数据一致,为进一步研究 hH(V)1 的结构和功能提供了有价值的基础。用 Zn(2+)作为探针,用 His 取代 hH(V)1 的 S4 螺旋中的每个 Arg 残基,以测试其可及性。S4 中的两个最外层 Arg 残基可与外部溶液接触,而最内层 Arg 残基仅与内部溶液接触。建模和实验数据均表明,在开放状态下,hH(V)1 的 S4 螺旋中的第三个 Arg 残基 Arg(211)仍可与内部溶液接触,且位于电荷转移中心 Phe(150)附近。