Institute of Polymer Materials, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstraße 7, D-91058 Erlangen, Germany.
Nanoscale. 2013 May 21;5(10):4230-5. doi: 10.1039/c3nr33723e.
Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current-voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics.
半导体纳米线场效应晶体管（FET）在电荷输运的基础研究以及在电子学中的潜在应用方面都很有趣。在这里，我们报告了使用离子液体和离子凝胶进行电解质门控的低压、低滞后和双极性 PbSe 纳米线 FET。我们在低于 1 V 的栅极电压下获得了平衡的空穴和电子迁移率。由于离子液体的有效电容较大，因此与具有传统电介质（如 SiO2）的纳米线 FET 相比，电解质门控纳米线 FET 受外部掺杂和陷阱的影响要小得多。观察到的电流-电压特性和导通/截止比表明肖特基势垒几乎完全透明，并且能够有效地将双极性电荷注入到低带隙一维半导体中。最后，我们探索了将这些双极性纳米线 FET 应用于印刷电子互补反相器的可能性。
