International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
ACS Appl Mater Interfaces. 2013 May;5(9):3625-30. doi: 10.1021/am400030z. Epub 2013 Apr 17.
We achieved drain-current switching of diarylethene-channel field-effect transistors with light- and electric-field effects. The drain current was reversibly changed by alternating ultraviolet and visible light irradiation. Stress is placed on the fact that the on/off ratio realized by light irradiation was 1 × 10(2) (1 × 10(4)%) and this value is much larger than those in other photochromism-based transistors. These results indicate that the drain current was effectively controlled by light irradiation. Furthermore, the on and off states modulated by light were maintained without light irradiation even after 1 week, exhibiting that our transistor works as an optical memory. We clarified that the light-driven modulation can be attributed to the transformation in the π-conjugation system accompanied by photoisomerization. These findings have the potential to attain high-performance optoelectrical organic devices including optical sensors, optical memory, and photoswitching transistors.
我们实现了二芳基乙烯沟道场效应晶体管的电流开关,其响应包括光和电场的作用。通过交替的紫外光和可见光辐照,可实现对漏极电流的可逆调控。值得注意的是,光辐照所实现的开关比为 1×10(2)(1×10(4)%),该值远大于其他光致变色晶体管的数值。这些结果表明,光辐照可有效控制漏极电流。此外,即使在 1 周后没有光辐照,通过光调制的导通和关断状态也能保持,表明我们的晶体管可用作光存储器。我们明确指出,光驱动的调制可归因于光致异构化伴随的π共轭体系的转变。这些发现有望实现高性能光电有机器件,包括光传感器、光存储器和光电开关晶体管。