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用于高性能非易失性有机存储晶体管的光致发光体锚定分子开关。

Photophore-Anchored Molecular Switch for High-Performance Nonvolatile Organic Memory Transistor.

作者信息

Hassan Syed Zahid, Kwon Jieun, Lee Juhyeok, Sim Hye Ryun, An Sanghyeok, Lee Sangjun, Chung Dae Sung

机构信息

Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea.

出版信息

Adv Sci (Weinh). 2024 Jun;11(23):e2401482. doi: 10.1002/advs.202401482. Epub 2024 Mar 30.

DOI:10.1002/advs.202401482
PMID:38554398
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11186055/
Abstract

Over the past decade, molecular-switch-embedded memory devices, particularly field-effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs. Despite substantial efforts, realizing large memory window with a long retention time, a critical factor in memory device functionality, remains a challenge. This is due to the inability of an isomeric state of a molecular switch to serve as a stable deep trap state within the semiconductor layer. Herein, the study addresses this limitation by introducing chemical bonding between molecular switch and conjugated polymeric semiconductor, facilitating closed isomer of diarylethene (DAE) to operate as a morphologically stable deep trap state. Azide- and diazirine-anchored DAEs are synthesized, which form chemical bonds to the polymer through photocrosslinking, thereby implementing permanent and controllable trapping states nearby conjugated backbone of polymer semiconductor. Consequently, when diazirine-anchored DAE is blended with F8T2 and subjected to photocrosslinking, the resulting organic FETs exhibit remarkable memory performance, including a memory window of 22 V with a retention time over 10 s, a high photoprogrammable on/off ratio over 10, and a high operational stability over 100 photocycles. Further, photophore-anchored DAEs can achieve precise patterning, which enables meticulous control over the semiconductor layer structure.

摘要

在过去十年中,嵌入分子开关的存储器件,特别是场效应晶体管(FET),引起了广泛关注。分子开关被集成到FET中以调节其电阻或电流水平。尽管付出了巨大努力,但实现具有长保持时间的大存储窗口(这是存储器件功能的一个关键因素)仍然是一个挑战。这是由于分子开关的异构体状态无法在半导体层内充当稳定的深陷阱状态。在此,该研究通过引入分子开关与共轭聚合物半导体之间的化学键来解决这一限制,促进二芳基乙烯(DAE)的闭环异构体作为形态稳定的深陷阱状态运行。合成了叠氮基和重氮烷基锚定的DAE,它们通过光交联与聚合物形成化学键,从而在聚合物半导体的共轭主链附近实现永久且可控的陷阱状态。因此,当重氮烷基锚定的DAE与F8T2混合并进行光交联时,所得的有机FET表现出卓越的存储性能,包括22 V的存储窗口、超过10 s的保持时间、超过10的高光可编程开/关比以及超过100个光循环的高操作稳定性。此外,光致发光基团锚定的DAE可以实现精确的图案化,从而能够对半导体层结构进行精细控制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/b64f3feb2182/ADVS-11-2401482-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/94bb389a0ad6/ADVS-11-2401482-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/23ad9e62633e/ADVS-11-2401482-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/5c62c519d025/ADVS-11-2401482-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/570dd81a642b/ADVS-11-2401482-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/b64f3feb2182/ADVS-11-2401482-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/94bb389a0ad6/ADVS-11-2401482-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/23ad9e62633e/ADVS-11-2401482-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/5c62c519d025/ADVS-11-2401482-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/570dd81a642b/ADVS-11-2401482-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c8f5/11186055/b64f3feb2182/ADVS-11-2401482-g006.jpg

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