Streyer W, Law S, Rooney G, Jacobs T, Wasserman D
Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois Urbana Champaign, 208 N. Wright St., Urbana, IL 61801, USA.
Opt Express. 2013 Apr 8;21(7):9113-22. doi: 10.1364/OE.21.009113.
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of the dielectric layer. The absorption resonance is shown to be largely polarization-independent and angle-invariant. Upon heating, we observe selective thermal emission from our materials. Experimental data is compared to an analytical model of our structures with strong agreement.
我们使用由重掺杂硅和薄的高折射率锗介电层组成的双层系统,展示了在很宽的中红外波长范围(5 - 12微米)内从强吸收到完美吸收的特性。我们通过改变介电层的厚度来展示吸收共振的光谱控制。结果表明,吸收共振在很大程度上与偏振无关且与角度无关。加热时,我们观察到材料的选择性热发射。实验数据与我们结构的分析模型进行了比较,两者吻合度很高。