1] Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA [2] Department of Electrical Engineering, Turkish Military Academy, 06654 Ankara, Turkey.
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA.
Sci Rep. 2015 Feb 2;5:8157. doi: 10.1038/srep08157.
We show that a triple-layer metal-insulator-metal (MIM) structure has spectrally selective IR absorption, while an ultra-thin metal film has non-selective absorption in the near infrared wavelengths. Both sub-wavelength scale structures were implemented with an ultra-thin 6 nm Cr top layer. MIM structure was demonstrated to have near perfect absorption at λ = 1.2 μm and suppressed absorption at λ = 1.8 μm in which experimental and simulated absorptions of the thin Cr film are even higher than the MIM. Occurrence of absorption peaks and dips in the MIM were explained with the electric field intensity localization as functions of both the wavelength and the position. It has been shown that the power absorption in the lossy material is a strong function of the electric field intensity i.e. the more the electric field intensity, the more the absorption and vice versa. Therefore, it is possible to engineer IR emissive properties of these ultra-thin nanocavities by controlling the electric field localization with proper designs.
我们表明,三层金属-绝缘体-金属(MIM)结构具有光谱选择性的红外吸收,而超薄金属膜在近红外波长具有非选择性吸收。这两种亚波长尺度结构都采用了超薄膜 6nmCr 顶层实现。MIM 结构在 λ=1.2μm 处表现出近乎完美的吸收,在 λ=1.8μm 处吸收被抑制,而实验和模拟的薄 Cr 膜的吸收甚至高于 MIM。MIM 中吸收峰和吸收谷的出现可以用电场强度的局域化来解释,其既是波长的函数,也是位置的函数。已经表明,在有损耗材料中的功率吸收是电场强度的强函数,即电场强度越高,吸收越强,反之亦然。因此,通过适当的设计控制电场的局域化,可以对这些超薄纳米腔的红外发射特性进行工程设计。