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InAs 量子阱和点的光学特性径向生长在纤锌矿 InP 纳米线上。

Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.

机构信息

Lund University, Solid State Physics and the Nanometer structure consortium, Box 118, SE-221 00, Lund, Sweden.

出版信息

Nanotechnology. 2013 Jun 7;24(22):225203. doi: 10.1088/0957-4484/24/22/225203. Epub 2013 May 1.

Abstract

Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by μPL and the spatial origin of the emission was identified with CL imaging.

摘要

报道了使用金属有机气相外延生长的单核壳 InP-InAs 纤锌矿纳米线的相关微光致发光(μPL)和阴极发光(CL)测量结果。研究了覆盖 1-12 ML 径向 InAs 壳厚度的样品。使用基于线性变形势理论的模型,根据 InAs 壳厚度的跃迁能量依赖性确定了纤锌矿材料的有效质量。还研究了在其上选择性成核量子点的具有混合闪锌矿和纤锌矿段的 InP 核。通过 μPL 观察到窄峰,并通过 CL 成像确定了发射的空间起源。

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