Solid State Physics, Lund University, Lund, Sweden.
Nanotechnology. 2011 Jul 1;22(26):265606. doi: 10.1088/0957-4484/22/26/265606. Epub 2011 May 17.
Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed.
近年来，在单 III-V 半导体纳米线中控制晶体相已成为一个重要的挑战，也是对传统单材料体系能带工程的一种可能补充。在这里，我们研究了一种在单根纳米线中精确控制晶体相的中断供应方法。纳米线是通过金属有机气相外延法使用金颗粒作为种子生长的，并通过透射电子显微镜进行分析。观察到可以按需在纯 InAs 闪锌矿纳米线中插入具有受控长度和位置的纤锌矿段。纤锌矿和闪锌矿段之间的界面可以达到原子级的锋利程度，并且段的厚度可以只有几个双层。介绍并讨论了该技术的生长机制、适用性和局限性。
