Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria.
Nanotechnology. 2011 Oct 21;22(42):425704. doi: 10.1088/0957-4484/22/42/425704. Epub 2011 Sep 22.
High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.
高分辨率 X 射线衍射用于研究纤锌矿型磷化铟纳米线的结构特性。采用 S 掺杂的金属有机气相外延法生长纤锌矿型磷化铟纳米线。通过评估布拉格峰位置,我们确定了纤锌矿型磷化铟纳米线的晶格参数。发现其单元晶胞尺寸与从立方体磷化铟晶格常数的几何转换中预期的尺寸不同。与闪锌矿相相比,c 方向上的原子间距增加,而 a 方向上的原子间距减小。利用具有薄核和厚的名义本征壳的核/壳纳米线,我们能够确定纤锌矿型磷化铟的晶格参数,由于壳层的体积大得多,因此可以忽略 S 掺杂的影响。所确定的材料特性将能够对纤锌矿型磷化铟纳米线的电子和光学性质进行从头计算。