State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China.
Nanoscale. 2013 Jun 7;5(11):5080-5. doi: 10.1039/c3nr33445g. Epub 2013 May 2.
Electrically pumped lasing action has been realized in ZnO from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterostructure, an ultralow threshold of 3.9 mA was obtained. The mechanism of the laser is associated with the in-plane random resonator cavities formed in the ZnO films and the elaborate hollow-shaped SiO2 cladding pattern, which prevent the lateral diffusion of injection current and ultimately lower the threshold current of the laser diode. In addition, a waveguide mechanism due to different refractive indices of three epilayers enhances the guided optical field on the ZnO side, resulting in an improved light extraction efficiency.
已在 n-MgZnO/i-ZnO/SiO2/p-Si 非对称双异质结构的 ZnO 中实现了电泵浦激光作用，获得了低至 3.9 mA 的超低阈值。激光的机制与在 ZnO 薄膜中形成的平面随机谐振腔和精细的空心 SiO2 包层图案有关，这可以防止注入电流的横向扩散，并最终降低激光二极管的阈值电流。此外，由于三个外延层的折射率不同而产生的波导机制增强了 ZnO 侧的导光场，从而提高了光提取效率。
