Department of Electrical Engineering, Korea University, Seoul, Korea.
Nanotechnology. 2011 Jun 17;22(24):245203. doi: 10.1088/0957-4484/22/24/245203. Epub 2011 Apr 21.
Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2 µA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property.
电驱动激光在由 n-ZnO 和 p-Si 纳米线（NWs）组成的发光器件中得到了证明。 ZnO NWs 通过热化学气相沉积合成，Si NWs 通过 Si 晶片的晶面湿法刻蚀形成。通过直接转移和电介质电泳方法使用 NWs 构建了 p-n 异质结器件。在 2 µA 的激励电流下，电致发光光谱显示出激光行为，这一现象可以通过 ZnO 纳米结构相关的腔特性来解释。
