State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Nanoscale. 2015 May 28;7(20):9164-8. doi: 10.1039/c5nr01562f.
We have previously reported on electrically pumped random lasing (RL) with onset voltages at least 3.3 V from ZnO-based light-emitting devices with metal-insulator-semiconductor (MIS) structures in the form of Au/SiO2/ZnO. Here, by inserting an ∼5 nm thick MoO3 layer between SiO2 and ZnO films in the aforementioned MIS structured device, the RL onset voltage is decreased to only ∼2.6 V and, moreover, the output optical power is multiplied several times. Such improved RL performance is ascribed to the enhanced injection of holes into ZnO via the MoO3 interlayer that features a low-lying conductive band and therefore a large work function.
我们之前曾报道过，在基于 ZnO 的发光器件中，采用金属-绝缘体-半导体（MIS）结构的 Au/SiO2/ZnO 形式，其起始电压至少为 3.3V 的电泵浦随机激光（RL）。在此，通过在上述 MIS 结构器件的 SiO2 和 ZnO 薄膜之间插入一层约 5nm 厚的 MoO3 层，RL 的起始电压降低到仅约 2.6V，而且输出光功率增加了数倍。这种 RL 性能的提高归因于 MoO3 层间带较低且功函数较大，从而增强了空穴注入 ZnO 的能力。
