Dong J J, Zhang X W, Zhang S G, Tan H R, Yin Z G, Gao Y, Wang J X
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1101-5. doi: 10.1166/jnn.2013.5980.
In this work, periodic arrays of various ZnO nanostructures were fabricated on both Si and GaN substrates via a facile hydrothermal process. To realize the site-specific growth, two kinds of masks were introduced. The polystyrene (PS) microsphere self-assembled monolayer (SAM) was employed as the mask to create a patterned seed layer to guide the growth of ZnO nanostructures. However, the resulting ZnO nanostructures are non-equidistant, and the diameter of the ZnO nanostructures is uncontrollable. As an alternative, TiO2 sol was used to replicate the PS microsphere SAM, and the inverted SAM (ISAM) mask was obtained by extracting the PS microspheres with toluene. By using the ISAM mask, the hexagonal periodic array of ZnO nanostructures with high uniformity were readily produced. Furthermore, the effect of the underlying substrates on the morphology of ZnO nanostructures has been investigated. It is found that the highly ordered and vertically aligned ZnO nanorods epitaxially grow on the GaN substrate, while the ZnO nanoflowers on Si substrates are random oriented.
在这项工作中,通过简便的水热法在硅和氮化镓衬底上制备了各种氧化锌纳米结构的周期性阵列。为了实现特定位置的生长,引入了两种掩膜。使用聚苯乙烯(PS)微球自组装单层膜(SAM)作为掩膜来创建图案化的种子层,以引导氧化锌纳米结构的生长。然而,所得的氧化锌纳米结构间距不等,且氧化锌纳米结构的直径无法控制。作为替代方案,使用二氧化钛溶胶复制PS微球SAM,并通过用甲苯萃取PS微球获得反相自组装单层膜(ISAM)掩膜。通过使用ISAM掩膜,很容易制备出具有高均匀性的氧化锌纳米结构六边形周期性阵列。此外,还研究了底层衬底对氧化锌纳米结构形貌的影响。结果发现,高度有序且垂直排列的氧化锌纳米棒在氮化镓衬底上外延生长,而硅衬底上的氧化锌纳米花则取向随机。